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1

Device design guideline for junctionless gate-all-around nanowire negative-capacitance FET with HfO2-based ferroelectric gate stack

Choi, Yejoo, Hong, Yuri, Shin, Changhwan

Journal:

Semiconductor Science and Technology

Year:

2019

Language:

english

File:

PDF, 1.00 MB

english, 2019

2

Current-Voltage Model for Negative Capacitance Field-Effect Transistors

Lee, Hyunjae, Yoon, Youngki, Shin, Changhwan

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 795 KB

english, 2017

3

Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High-κ/Metal-Gate Work-Function Variation

Nam, Hyohyun, Shin, Changhwan, Park, Jung-Dong

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.57 MB

english, 2018

4

Performance and Area Scaling Benefits of FD-SOI Technology for 6-T SRAM Cells at the 22-nm Node

Changhwan Shin, Min Hee Cho, Tsukamoto, Y., Bich-Yen Nguyen, Mazuré, C., Nikolić, B., Tsu-Jae King Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.60 MB

english, 2010

5

[IEEE 2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010 - Paris, France (2010.05.30-2010.06.2)] Proceedings of 2010 IEEE International Symposium on Circuits and Systems - SRAM design in fully-depleted SOI technology

Nikolic, Borivoje, Shin, Changhwan, Cho, Min Hee, Sun, Xin, Liu, Tsu-Jae King, Nguyen, Bich-Yen

Year:

2010

Language:

english

File:

PDF, 418 KB

english, 2010

6

Quasi-planar bulk CMOS technology for improved SRAM scalability

Changhwan Shin, Chen Hua Tsai, Mei Hsuan Wu, Chung Fu Chang, You Ren Liu, Chih Yang Kao, Guan Shyan Lin, Kai Ling Chiu, Chuan-Shian Fu, Cheng-tzung Tsai, Chia Wen Liang, Borivoje Nikolić, Tsu-Jae King

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 797 KB

english, 2011

7

Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET

Changhwan Shin, Xin Sun, Tsu-Jae King Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 547 KB

english, 2009

8

[IEEE 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2013.04.22-2013.04.24)] 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - The design optimization and variation study of segmented-channel MOSFET using HfO2 or SiO2 trench isolation

Nam, Hyohyun, Changhwan Shin,

Year:

2013

File:

PDF, 839 KB

2013

9

Impact of temperature on negative capacitance field-effect transistor

Jo, Jaesung, Shin, Changhwan

Journal:

Electronics Letters

Year:

2015

Language:

english

File:

PDF, 421 KB

english, 2015

10

Negative Capacitance Field Effect Transistor with Hysteresis-Free Sub-60-mV/decade Switching

Jo, Jaesung, Shin, Changhwan

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 952 KB

english, 2016

11

Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure

Shin, Changho, Kim, Jeong-Kyu, Shin, Changhwan, Kim, Jong-Kook, Yu, Hyun-Yong

Journal:

Current Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.72 MB

english, 2016

12

Vertical Tunnel FET: Design Optimization With Triple Metal-Gate Layers

Ko, Eunah, Lee, Hyunjae, Park, Jung-Dong, Shin, Changhwan

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.20 MB

english, 2016

13

Impact of Equivalent Oxide Thickness on Threshold Voltage Variation Induced by Work-Function Variation in Multigate Devices

Lee, Youngtaek, Shin, Changhwan

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.99 MB

english, 2017

14

Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-type Germanium

Kim, Gwang-Sik, Kim, Seung-Hwan, Lee, Tae In, Cho, Byung Jin, Choi, Changhwan, Shin, Changhwan, Shim, Joon Hyung, Kim, Jiyoung, Yu, Hyun-Yong

Journal:

ACS Applied Materials & Interfaces

Year:

2017

Language:

english

File:

PDF, 4.07 MB

english, 2017

15

Effective drive current in steep slope FinFET (vs. conventional FinFET)

Ko, Eunah, Shin, Changhwan

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 921 KB

english, 2017

16

Process-Induced Random Variation: Work-Function Variation in Stacked Nanowire Field Effect Transistor

Park, Jinyoung, Shin, Changhwan

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2019

Language:

english

File:

PDF, 4.27 MB

english, 2019

17

Value of the Filtration Fraction Assessed by Dynamic 99mTc-Diethylenetriaminepentaacetic Acid Renal Scintigraphy After Angiotensin-Converting Enzyme Inhibition for the Diagnosis of Renovascular Hypertension

Shin, Eonwoo, Sung, Changhwan, Son, Hye Joo, Lee, Dong Yun, Chae, Sun Young, Moon, Dae Hyuk

Journal:

Nuclear Medicine and Molecular Imaging

Year:

2019

Language:

english

File:

PDF, 1.33 MB

english, 2019

18

Process-Induced Random Variation: Work-Function Variation in Stacked Nanowire Field Effect Transistor

Park, Jinyoung, Shin, Changhwan

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2019

File:

PDF, 4.27 MB

2019

19

Phosphomolybdic Acid as a Catalyst for Oxidative Valorization of Biomass and Its Application as an Alternative Electron Source

Oh, Hyeonmyeong, Choi, Yuri, Shin, Changhwan, Nguyen, Trang Vu Thien, Han, Yujin, Kim, Hyunwoo, Kim, Yong Hwan, Lee, Jae-Won, Jang, Ji-Wook, Ryu, Jungki

Journal:

Year:

2020

Language:

english

File:

PDF, 1.16 MB

english, 2020

20

NCFET-based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity

Hong, Yuri, Choi, Yejoo, Shin, Changhwan

Journal:

IEEE Journal of the Electron Devices Society

Year:

2020

File:

PDF, 798 KB

2020

21

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate

Choi, Yejoo, Shin, Jaemin, Moon, Seungjun, Shin, Changhwan

Journal:

Year:

2020

File:

PDF, 2.57 MB

2020

22

[IEEE 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) - Penang, Malaysia (2020.4.6-2020.4.21)] 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) - Yield estimation of NCFET-based 6-T SRAM

Hong, Yuri, Shin, Changhwan

Year:

2020

File:

PDF, 1.06 MB

2020

23

Device Design Guideline for HfOâ-Based Ferroelectric-Gated Nanoelectromechanical System

Yoon, Chankeun, Min, Jinhong, Shin, Jaemin, Shin, Changhwan

Journal:

IEEE Journal of the Electron Devices Society

Year:

2020

File:

PDF, 1.85 MB

2020

24

Performance and Yield Benefits of Quasi-Planar Bulk CMOS Technology for 6-T SRAM at the 22-nm Node

Changhwan Shin, Damrongplasit, N., Xin Sun, Tsukamoto, Y., Nikolic, B., Tsu-Jae King Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 974 KB

english, 2011

25

Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs

Xin Sun, Moroz, V., Damrongplasit, N., Changhwan Shin, Tsu-Jae King Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.06 MB

english, 2011

26

Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs

Damrongplasit, N., Changhwan Shin, Sung Hwan Kim, Vega, R.A., Tsu-Jae King Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 836 KB

english, 2011

27

Design Optimization of Multigate Bulk MOSFETs

Ho, Byron, Sun, Xin, Shin, Changhwan, Liu, Tsu-Jae King

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 830 KB

english, 2013

28

[IEEE 2012 IEEE International Electric Vehicle Conference (IEVC) - Greenville, SC, USA (2012.03.4-2012.03.8)] 2012 IEEE International Electric Vehicle Conference - Design of Π core and Π2 core PM-aided switched reluctance motors

Kim, Changsung Sean, Lee, Geunhong, Lee, Kwanghyun, Lee, Jaesung, Cho, Yongwan, Won, Jang Hyeok, Shin, Hongchul, Choi, Changhwan, Bae, Han Kyung

Year:

2012

Language:

english

File:

PDF, 1.41 MB

english, 2012

29

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

Padilla, Alvaro, Chun Wing Yeung,, Shin, Changhwan, Hu, Chenming, Tsu-Jae King Liu,

Year:

2008

Language:

english

File:

PDF, 1006 KB

english, 2008

30

Evaluation of loss coefficient for an end plug with side holes in dual-cooled annular nuclear fuel

ChangHwan Shin, Tae-Hyun Chun, Dong-Seok Oh…

Journal:

Journal of Mechanical Science and Technology

Year:

2012

Language:

english

File:

PDF, 806 KB

english, 2012

31

Impact of Current Flow Shape in Tapered (Versus Rectangular) FinFET on Threshold Voltage Variation Induced by Work-Function Variation

Nam, Hyohyun, Shin, Changhwan

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.62 MB

english, 2014

32

Statistical method for prediction of gait kinematics with Gaussian process regression

Yun, Youngmok, Kim, Hyun-Chul, Shin, Sung Yul, Lee, Junwon, Deshpande, Ashish D., Kim, Changhwan

Journal:

Journal of Biomechanics

Year:

2014

Language:

english

File:

PDF, 3.76 MB

english, 2014

33

[IEEE 2012 IEEE International SOI Conference - Napa, CA, USA (2012.10.1-2012.10.4)] 2012 IEEE International SOI Conference (SOI) - Effectiveness of strained-Si technology for thin-body MOSFETs

Xu, Nuo, Shin, Changhwan, Andrieu, Francois, Ho, Byron, Xiong, Wade, Weber, Olivier, Poiroux, Thierry, Nguyen, Bich-Yen, Choi, Munkang, Moroz, Victor, Faynot, Olivier, Liu, Tsu-Jae King

Year:

2012

Language:

english

File:

PDF, 1.12 MB

english, 2012

34

[IEEE 2012 IEEE International SOI Conference - Napa, CA, USA (2012.10.1-2012.10.4)] 2012 IEEE International SOI Conference (SOI) - Performance analysis and optimization for silicon interposer with Through Silicon Via (TSV)

Kim, Namhoon, Shin, Changhwan, Wu, Daniel, Kim, Joong-ho, Wu, Paul

Year:

2012

Language:

english

File:

PDF, 1011 KB

english, 2012

35

Study of High-k/Metal-Gate Work-Function Variation Using Rayleigh Distribution

Hyohyun Nam,, Changhwan Shin,

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 589 KB

english, 2013

36

[IEEE 2009 IEEE International SOI Conference - Foster City, CA, USA (2009.10.5-2009.10.8)] 2009 IEEE International SOI Conference - SRAM cell design considerations for SOI technology

Liu, Tsu-Jae King, Shin, Changhwan, Cho, Min Hee, Sun, Xin, Nikolic, Borivoje, Nguyen, Bich-Yen

Year:

2009

Language:

english

File:

PDF, 730 KB

english, 2009

37

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Tri-gate bulk MOSFET design for improved robustness to random dopant fluctuations

Shin, Changhwan, Carlson, Andrew, Sun, Xin, Jeon, Kanghoon, Liu, Tsu-Jae King

Year:

2008

Language:

english

File:

PDF, 1.47 MB

english, 2008

38

Impact of Using Double-Patterning Versus Single-Patterning on Threshold Voltage $(V_{\rm TH})$ Variation in Quasi-Planar Tri-Gate Bulk MOSFETs

Shin, Changhwan, Park, In Jun

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 414 KB

english, 2013

39

A 3D-grasp synthesis algorithm to grasp unknown objects based on graspable boundary and convex segments

Ala, RajeshKanna, Kim, Dong Hwan, Shin, Sung Yul, Kim, ChangHwan, Park, Sung-Kee

Journal:

Information Sciences

Year:

2015

Language:

english

File:

PDF, 3.72 MB

english, 2015

40

[IEEE 2010 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS 2010) - Taipei (2010.10.18-2010.10.22)] 2010 IEEE/RSJ International Conference on Intelligent Robots and Systems - On-line human motion transition and control for humanoid upper body manipulation

Sung Yul Shin,, ChangHwan Kim,

Year:

2010

Language:

english

File:

PDF, 1.59 MB

english, 2010

41

[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Tri-gate bulk CMOS technology for improved SRAM scalability

Shin, Changhwan, Nikolic, Borivoje, King Liu, Tsu-Jae, Tsai, Chen Hua, Wu, Mei Hsuan, Chang, Chung Fu, Liu, You Ren, Kao, Chih Yang, Lin, Guan Shyan, Chiu, Kai Ling, Fu, Chuan-Shian, Tsai, Cheng-tzung

Year:

2010

Language:

english

File:

PDF, 729 KB

english, 2010

42

[IEEE 2012 13th International Symposium on Quality Electronic Design (ISQED) - Santa Clara, CA, USA (2012.03.19-2012.03.21)] Thirteenth International Symposium on Quality Electronic Design (ISQED) - Quasi-Planar Tri-gate (QPT) bulk CMOS technology for single-port SRAM application

Tsukamoto, Yasumasa, Yabuuchi, Makoto, Fujiwara, Hidehiro, Nii, Koji, Shin, Changhwan, Liu, Tsu-Jae King

Year:

2012

Language:

english

File:

PDF, 1021 KB

english, 2012

43

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Convex Channel Design for Improved Capacitorless DRAM Retention Time

Cho, Min Hee, Shin, Changhwan, Liu, Tsu-Jae King

Year:

2009

Language:

english

File:

PDF, 787 KB

english, 2009

44

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Analysis of the relationship between random telegraph signal and negative bias temperature instability

Tsukamoto, Yasumasa, Toh, Seng Oon, Shin, Changhwan, Mairena, Andrew, King Liu, Tsu-Jae, Nikolic, Borivoje

Year:

2010

Language:

english

File:

PDF, 787 KB

english, 2010

45

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

Xin Sun,, Qiang Lu,, Moroz, V., Takeuchi, H., Gebara, G., Wetzel, J., Shuji Ikeda,, Changhwan Shin,, Tsu-Jae King Liu,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 339 KB

english, 2008

46

Impact of Gate Line-Edge Roughness (LER) Versus Random Dopant Fluctuations (RDF) on Germanium-Source Tunnel FET Performance

Damrongplasit, Nattapol, Kim, Sung Hwan, Shin, Changhwan, Liu, Tsu-Jae King

Journal:

IEEE Transactions on Nanotechnology

Year:

2013

Language:

english

File:

PDF, 647 KB

english, 2013

47

Symmetric tunnel field-effect transistor (S-TFET)

Nam, Hyohyun, Cho, Min Hee, Shin, Changhwan

Journal:

Current Applied Physics

Year:

2015

Language:

english

File:

PDF, 2.88 MB

english, 2015

48

[IEEE 2012 IEEE International Conference on Robotics and Automation (ICRA) - St Paul, MN, USA (2012.05.14-2012.05.18)] 2012 IEEE International Conference on Robotics and Automation - Humanoid's dual arm object manipulation based on virtual dynamics model

Shin, Sung Yul, Jun won Lee,, Kim, ChangHwan

Year:

2012

Language:

english

File:

PDF, 1.36 MB

english, 2012

49

[IEEE 2013 IEEE 13th International Conference on Rehabilitation Robotics (ICORR 2013) - Seattle, WA (2013.6.24-2013.6.26)] 2013 IEEE 13th International Conference on Rehabilitation Robotics (ICORR) - Intentional Movement Performance Ability (IMPA): A method for robot-aided quantitative assessment of motor function

Sung Yul Shin,, Jung Yoon Kim,, Sanghyeop Lee,, Junwon Lee,, Seung-Jong Kim,, ChangHwan Kim,

Year:

2013

Language:

english

File:

PDF, 1.27 MB

english, 2013

50

Human-Like Motion Generation and Control for Humanoid's Dual Arm Object Manipulation

Shin, Sung Yul, Kim, ChangHwan

Journal:

IEEE Transactions on Industrial Electronics

Year:

2015

Language:

english

File:

PDF, 2.28 MB

english, 2015